2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I = 150 mA (max) CEO C High h : h = 120 to 400 FE FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) FE FE C FE C = 0.95 (typ.) Complementary to 2SC4944 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current IC 150 mA Base current I 30 mA B JEDEC P C Collector power dissipation 200 mW (Note 3) JEITA T (Note 1) 150 j TOSHIBA 2-2L1A Junction temperature C Tj (Note 2) 125 Weight: 6.2 mg (typ.) T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Total rating, Mounted on FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 5) Marking Equivalent Circuit (top view) Start of commercial production 1992-07 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SA1873 Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 50 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C hFE DC current gain V 6 V, I 2 mA 120 400 CE C (Note 4) Collector-emitter saturation voltage V I 100 mA, I 10 mA 0.1 0.3 V CE (sat) C B Transition frequency f V 10 V, I 1 mA 80 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 4 7 pF ob CB E Note 4: hFE classification Y (Y): 120 to 240, GR (G): 200 to 400 ( ) marking symbol 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation