2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: h = 200 to 500 (I = 0.5 A) FE C Low collector-emitter saturation voltage: V = 0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) f Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 7 V EBO DC I 2.5 C Collector current A Pulse I 4 CP JEDEC Base current I 250 mA B JEITA t = 10 s 1 P Collector power C W dissipation (Note 1) TOSHIBA 2-3S1C DC 0.625 Junction temperature T 150 C Weight: 0.01 g (typ.) j Storage temperature range T 55 to 150 C stg 2 Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2001-02 1 2013-11-01 2SA2061 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 20 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 20 V (BR) CEO C B h (1) V = 2 V, I = 0.5 A 200 500 FE CE C DC current gain h (2) V = 2 V, I = 1.6 A 100 FE CE C Collector-emitter saturation voltage V I = 1.6 A, I = 53 mA 0.19 V CE (sat) C B Base-emitter saturation voltage V I = 1.6 A, I = 53 mA 1.1 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 28 pF ob CB E Rise time t 70 See Figure 1 circuit diagram. r Switching time Storage time t V 12 V, R = 7.5 150 ns CC L stg I = 53 mA, I = 53 mA Fall time t B1 B2 40 f Marking V Part No. (or abbreviation code) CC 20 s I B2 I B1 Output W E 0 Input I B1 I B2 Duty cycle < 1% Lot code (month) Lot code (year) Dot: even year No dot: odd year Figure 1 Switching Time Test Circuit & Timing Chart 2 2013-11-01 R L