2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = 50V, I = 100mA (max) CEO C Unit: mm Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Base current I 30 mA B Collector power dissipation P 100* mW C Junction temperature T 150 C j 1.BASE 2.EMITTER Storage temperature range T 55 to 150 C stg CST3 3.COLLECTOR * : Mounted on FR4 board (10 mm 10 mm 1 mmt) Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.75 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 0.1 A EBO EB C DC current gain h (Note) V = 6 V, I = 2 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.18 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 1.6 pF ob CB E Note: h classification Y (F): 120 to 240, GR (H): 200 to 400 FE ( ) marking symbol Marking Type Name h Rank FE 1 3 8F 2 Start of commercial production 2004-08 2020 1 2020-04-01 Toshiba Electronic Devices & Storage Corporation 2SA2154CT hFE - IC IC - VCE I V h I C CE FE C 1000 -120 CCOomMMOmon Nem EittMIer TT TEa R= 25Ta=C 25 -2.0 -100 -1.5 Ta = 100 25 -1.0 -80 -0.7 -60 100 -0.5 -25 -0.3 -40 COMMON EMITTER Common emitter -0.2 VVCCE E== 66V V -20 VCE = 1 V VCE=1V I = 0.1 mA IBB = -0.1mA -00 10 0 -0 -1 -2 -3 -4 -5 -6 -7 -0.1 -1 -10 -100 Collector-emitter voltage V (V) Collector current I (mA) COLLECTOR-EMITTER VOLTAGCEE VCE (V) C COLLECTOR CURRENT IC (mA) V I VCCEE(s (saatt)) - ICC V I VBE(sBE (asta) t)- ICC -1 -10 CCoOmmoMMOn emN EittMIer TTER Common emitter IC/IB = 10 COMMON EMITTER IC/IB=10 IC/IB = 10 IC/IB=10 -0.1 -1 Ta = 100 25 -25 -0.01 -0.1 -0.1 -1 -10 -100 -0.1 -1 -10 -100 Collector current I (mA) Collector current I (mA) C C COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IB I -VBE V B BE P * T C a PC- Ta -1000 150 140 Mounted on FR4 board 130 (10 mm 10 mm 1 mmt) 120 -100 110 100 Ta = 100 -25 90 80 -10 25 70 60 50 40 -1 30 Common emitter COMMON EMITTER 20 V = 6 V CE VCE=6V 10 0 -0.1 0 0 20 40 60 80 100 120 140 160 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Ambient temperature T (C) a Base-emitter voltage V (V) AMBIENT TEMPERATURE Ta (C) BE BASE-EMITTER VOLTAGE VBE (V) * total rating The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020 2 2020-04-01 Toshiba Electronic Devices & Storage Corporation COCLolLlEecCTtorO-emR-EitMterIT sTaEturR SatiAon vTURAoltagTIeO N COLLECTOR CURRENT IC (mA) Base current I (A) BASE CURREMTB IB (A) V (V) CE (sat) VOLTAGE VCE(sat) (V) Collector current I (mA) C BASE-Base-EMemiITtterTER sat SATuration vURAToltIageON DC CURRENT GAIN hFE COLLECColTlOecRtor PO powWERer d DisIsSSIipatPATion I OPN PC (m V) (m V) C DC current gain h V (V) FE BE (sat) VOLTAGE VBE(sat) (V)