X-On Electronics has gained recognition as a prominent supplier of 2SC3265-Y,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3265-Y,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3265-Y,LF Toshiba

2SC3265-Y,LF electronic component of Toshiba
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Part No.2SC3265-Y,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Toshiba Bipolar Transistors - BJT Bias Resistor Built-in transistor
Datasheet: 2SC3265-Y,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.105 ea
Line Total: USD 315 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1275
6000 : USD 0.1273
9000 : USD 0.1269
12000 : USD 0.1265
15000 : USD 0.1261
24000 : USD 0.1258
30000 : USD 0.1254
45000 : USD 0.1251
75000 : USD 0.1247

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.105
6000 : USD 0.0908
15000 : USD 0.0807
30000 : USD 0.0756
75000 : USD 0.067
150000 : USD 0.0645

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5625
10 : USD 0.4032
100 : USD 0.2284
500 : USD 0.1513
1000 : USD 0.116

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5625
10 : USD 0.4032
100 : USD 0.2284
500 : USD 0.1513
1000 : USD 0.116

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1651
10 : USD 0.8777
100 : USD 0.1988
500 : USD 0.1326
1000 : USD 0.1015
3000 : USD 0.0787
9000 : USD 0.0694
24000 : USD 0.0653
45000 : USD 0.0621

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC3265-Y,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3265-Y,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications Unit: mm High DC current gain: h = 100 to 320 FE (1) Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 25 V CEO Emitter-base voltage V 5 V EBO Collector current I 800 mA C Base current I 160 mA B Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-236MOD temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA SC-59 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.012 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 30 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 25 V (BR) CEO C B Emitter-base breakdown voltage V I = 0.1 mA, I = 0 5 V (BR) EBO E C h FE (1) V = 1 V, I = 100 mA 100 320 CE C (Note) DC current gain h V = 1 V, I = 800 mA 40 FE (2) CE C Collector-emitter saturation voltage V I = 500 mA, I = 20 mA 0.4 V CE (sat) C B Base-emitter voltage V V = 1 V, I = 10 mA 0.5 0.8 V BE CE C Transition frequency f V = 5 V, I = 10 mA 120 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 13 pF ob CB E Note: h classification O: 100 to 200, Y: 160 to 320 FE (1) Marking Start of commercial production 1982-10 1 2014-03-01 2SC3265 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TOSHIBA SEMICONDUCTORS
TS4
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