2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I = 150 mA (max) CEO C High h h = 120 to 700 FE: FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Complementary to 2SA1618 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B JEDEC P C Collector power dissipation 300 mW (Note 3) JEITA T (Note 1) 150 j TOSHIBA 2-3L1A Junction temperature C T (Note 2) 125 j Weight: 0.014 g (typ.) T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating Marking Equivalent Circuit (top view) Start of commercial production 1987-05 2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SC4207 Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 60 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C h FE DC current gain V 6 V, I 2 mA 120 700 CE C (Note 4) Collector-emitter saturation voltage V I 100 mA, I 10 mA 0.1 0.25 V CE (sat) C B Transition frequency f V 10 V, I 1 mA 80 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 2 3.5 pF ob CB E Note 4: hFE classification Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700 ( ) marking symbol 2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation