2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = 2 V, I = 4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 FE Small package Absolute Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO Collector current I 300 mA C Base current I 60 mA B P (Note 1, 3) 200 C JEDEC Collector power dissipation mW P (Note 2) 100 C JEITA SC-70 T (Note 1) 150 j Junction temperature C TOSHIBA 2-2E1A T (Note 2) 125 j Weight: 0.006 g (typ.) T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1For devices with the ordering part number ending in LF(T. Note 2For devices with the ordering part number in other than LF(T. 2 Note 3Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm 3) Marking Start of commercial production 1987-05 2021 1 2021-06-25 Toshiba Electronic Devices & Storage Corporation 2SC4213 Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 50 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 25 V, I 0 A 0.1 A EBO EB C h FE DC current gain V 2 V, I 4 mA 200 1200 CE C (Note) Collector-emitter saturation voltage V I 30 mA, I 3 mA 0.042 0.1 V CE (sat) C B Base-emitter voltage V V 2 V, I 4 mA 0.61 V BE CE C Transition frequency f V 6 V, I 4 mA 30 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 4.8 7 pF ob CB E Turn-on time t 160 on Switching time Storage time t 500 ns stg Fall time t 130 f Duty cycle 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 2021 2 2021-06-25 Toshiba Electronic Devices & Storage Corporation