2SC4215-O(TE85L,F) Toshiba

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: C = 0.55 pF (typ.) re Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 40 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 4 V EBO Collector current I 20 mA C Base current I 4 mA B Collector power dissipation P 100 mW C Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 40 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 4 V, I = 0 0.5 A EBO EB C h FE DC current gain V = 6 V, I = 1 mA 40 200 CE C (Note) Reverse transfer capacitance C V = 10 V, f = 1 MHz 0.55 pF re CB Transition frequency f V = 6 V, I = 1 mA 260 550 MHz T CE C Collector-base time constant C r V = 6 V, I = 1 mA, f = 30 MHz 25 ps c bb CE E Noise figure NF 2 5.0 dB V = 6 V, I = 1 mA, f = 100 MHz, CC E Figure 1 Power gain G 17 23 dB pe Note: h classification R: 40 to 80, O: 70 to 140, Y: 100 to 200 FE Start of commercial production 1987-06 1 2014-03-01 2SC4215 L : 0.8 mm silver plated copper wire, 4 T, 10 mm ID, 8 mm length 1 Figure 1 NF, G Test Circuit pe Marking 2 2014-03-01