X-On Electronics has gained recognition as a prominent supplier of 2SC5085-Y(TE85L,F) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5085-Y(TE85L,F) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5085-Y(TE85L,F) Toshiba

2SC5085-Y(TE85L,F) electronic component of Toshiba
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See Product Specifications
Part No.2SC5085-Y(TE85L,F)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Toshiba Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 100mW 12V
Datasheet: 2SC5085-Y(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3767
10 : USD 0.3043
100 : USD 0.2073
1000 : USD 0.1271
3000 : USD 0.1104
9000 : USD 0.1026
24000 : USD 0.0992
45000 : USD 0.097
99000 : USD 0.0948
N/A

Obsolete
0
MOQ : 40
Multiples : 1
40 : USD 0.7038
50 : USD 0.2058
100 : USD 0.1991
200 : USD 0.196
500 : USD 0.196
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5085-Y(TE85L,F) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5085-Y(TE85L,F) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, S = 11dB (f = 1 GHz) 21e Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 3 V EBO Base current I 40 mA B Collector current I 80 mA C Collector power dissipation P 100 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-70 absolute maximum ratings. TOSHIBA 2-2E1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.006 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Transition frequency f V = 10 V, I = 20 mA 5 7 GHz T CE C 2 S (1) V = 10 V, I = 20 mA, f = 500 MHz 16.5 21e CE C Insertion gain dB 2 S (2) V = 10 V, I = 20 mA, f = 1 GHz 7.5 11 21e CE C NF (1) V = 10 V, I = 5 mA, f = 500 MHz 1 CE C Noise figure dB NF (2) V = 10 V, I = 5 mA, f = 1 GHz 1.1 2 CE C Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 10 V, I = 0 1 A CBO CB E Emitter cut-off current I V = 1 V, I = 0 1 A EBO EB C h FE DC current gain V = 10 V, I = 20 mA 80 240 CE C (Note 1) Output capacitance C 1.0 pF ob V = 10 V, I = 0, f = 1 MHz (Note 2) CB E Reverse transfer capacitance C 0.65 1.15 pF re Note 1: h classification O: 80 to 160, Y: 120 to 240 FE Note 2: C is measured by 3 terminal method with capacitance bridge. re Start of commercial production 1993-10 1 2014-03-01 2SC5085 Marking 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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