X-On Electronics has gained recognition as a prominent supplier of 2SC6026MFVGR,L3F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC6026MFVGR,L3F Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC6026MFVGR,L3F Toshiba

2SC6026MFVGR,L3F electronic component of Toshiba
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Part No.2SC6026MFVGR,L3F
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 150 mA 60MHz 150 mW Surface Mount VESM
Datasheet: 2SC6026MFVGR,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0436 ea
Line Total: USD 0.44 
Availability - 7171
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
7171
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0436
100 : USD 0.0381
300 : USD 0.0353
1000 : USD 0.0335
5000 : USD 0.0318
8000 : USD 0.0311

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC6026MFVGR,L3F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC6026MFVGR,L3F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm 1.2 0.05 High voltage and high current : V = 50 V, I = 150 mA (max) 0.80 0.05 CEO C Excellent h linearity : FE h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C 1 High h h = 120 to 400 1 FE : FE Complementary to 2SA2154MFV 3 2 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V 1.BASE EBO 2.EMITTER Collector current I 150 mA VESM C 3.COLLECTOR Base current I 30 mA B Collector power dissipation P 150* mW C JEDEC Junction temperature T 150 C j JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-1L1A Note: Using continuously under heavy loads (e.g. the application of Weight: 1.5 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Mounted on FR4 board (25.4 mm 25.4 mm 1.6mmt) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm Start of commercial production 2005-02 1 2014-03-01 1.2 0.05 0.8 0.05 0.5 0.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.052SC6026MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current I V = 60 V, I = 0 0.1 A CBO CB E Emitter cutoff current I V = 5 V, I = 0 0.1 A EBO EB C DC current gain h (Note) V = 6 V, I = 2 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.15 0.25 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 60 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 0.95 3 pF ob CB E Note: h classification Y (Y): 120 to 240, GR (G): 200 to 400 FE ( ) marking symbol Marking Type Name h Classification FE HY 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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