2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: V = 0.5 V (max) ( I = 1A) CE (sat) C High-speed switching: t = 0.4 s (typ.) stg Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 160 V CBO Collector-emitter voltage V 160 V CEX Collector-emitter voltage V 80 V CEO 1 : BASE 2 : COLLECTOR HEAT SINK Emitter-base voltage V 9 V EBO 3 : EMITTER DC I 3 A C Collector current Pulse I 5 A CP JEDEC Base current I 1.5 A B JEITA Collector power dissipation Tc = 25 P 10 W C TOSHIBA 2-7J1A Junction temperature T 150 C j Storage temperature range T 55 to 150 C Weight:0.36g (typ.) stg Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2005-12 1 2013-11-01 2SC6076 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit Collector cut-off current I V = 160 V, I = 0 1.0 A CBO CB E Emitter cut-off current I V = 9 V, I = 0 1.0 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 80 V (BR) CEO C B h V = 2 V, I = 1 mA 150 FE (1) CE C DC current gain h V = 2 V, I = 0.5 A 180 450 FE (2) CE C h V = 2 V, I = 1 A 100 FE (3) CE C V I = 0.5 A, I = 50 mA 0.3 V CE (sat) (1) C B Collector emitter saturation voltage V I = 1 A, I = 100 mA 0.5 V CE (sat) (2) C B Base-emitter saturation voltage V I = 1 A, I = 100 mA 1.5 V BE (sat) C B Transition frequency f V = 2 V, I = 0.5 A 150 MH T CE C Z Collector output capacitance C V = 10 V, I = 0,f = 1MH 14 pF ob CB E Z Output 20 s I Rise time t 0.05 B1 r Input I B2 Switching time s Storage time t 0.4 stg V = 24 V CC I = 100 mA ,I = 100 mA B1 B2 Fall time t 0.15 f Duty cycle 1% Marking C6076 Part No. (or abbreviation code) Lot code Note2 Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 I B1 I B2 24