2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 3 2 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 100 V CBO Collector-emitter voltage V 80 V CEX 1: Base 2: Emitter Collector-emitter voltage V 50 V CEO 3: Collector Emitter-base voltage V 7 V EBO UFM DC I 1.0 C Collector current A Pulse I 2.0 JEDEC CP Base current I 0.1 A B JEITA P (Note 1) 800 C Collector power dissipation TOSHIBA 2-2U1A mW P (Note 2) 500 C Weight: 6.6 mg (typ.) Junction temperature T 150 C j Storage temperature range T -55 to 150 C stg Note 1: Mounted on ceramic board. 2 (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-08 2009-2017 2017-07-31 1 Toshiba Electronic Devices & Storage Corporation 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05 2SC6135 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 100 V, I = 0 A 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 A 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 A 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 400 1000 FE CE C DC current gain h (2) V = 2 V, I = 0.3 A 200 FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 6 mA 0.12 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 6 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 5 pF ob CB E Rise time t 35 r See Figure 1. Switching time Storage time t V 30 V, R = 100 680 ns stg CC L I = -I = 10 mA B1 B2 Fall time t 85 f Marking V CC Part No. (or abbreviation code) 20 s I I B1 B1 Output Input I B2 I B2 Duty cycle < 1% Figure 1 : Switching Time Test Circuit & Timing Chart 2009-2017 2017-07-31 2 Toshiba Electronic Devices & Storage Corporation R L