CEZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type CEZ Series Applications Voltage surge protection Features Small package The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit 1: Cathode 1 2 2: Anode ESC Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25C) Characteristics Symbol Rating Unit *1 Power dissipation P 150 mW D *2 P 300 mW D Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25C) *3 *3 Electrostatic discharge voltage Electrostatic discharge voltage Type Peak pulse Peak pulse Type Peak pulse Peak pulse *4 *4 *4 *4 No. Contact Air power current No. Contact Air power current V (kV) P (W) I (A) V (kV) P (W) I (A) ESD PK PP ESD PK PP CEZ5V6 30 155 12 CEZ16V 30 200 5.5 CEZ6V2 30 175 11 CEZ20V 30 200 5 CEZ6V8 30 180 10 CEZ24V 30 200 4.5 CEZ8V2 30 200 8.5 CEZ30V 20 200 4 CEZ12V 30 200 7 CEZ36V 12 200 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimensions of 4 mm 4 mm. 2 *2: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm *3: according to IEC61000-4-2 *4: according to IEC61000-4-5, tp = 8 / 20 s Start of commercial production 2020-07 2020 1 2020-10-26 Toshiba Electronic Devices & Storage Corporation CEZ Series CEZ series Electrical Characteristics (Unless otherwise specified, T = 25 C) a Zener Voltage Dynamic Impedance Dynamic Clamp Total Reverse Current Type No. resistance voltage capacitance *1 *1*2 *3 Test Current Test Current Test Voltage V (V) Z () R () V (V) C (pF) I (A) Z Z DYN C t R I (mA) I (mA) V (V) Z Z R Min Typ. Max Max Typ. Typ. Typ. Max CEZ5V6 5.3 5.6 6.0 5 30 5 0.16 9 125 1 3.5 CEZ6V2 5.8 6.2 6.6 5 30 5 0.21 10 105 2.5 5.0 CEZ6V8 6.4 6.8 7.2 5 30 5 0.27 13 88 1.5 5.5 CEZ8V2 7.7 8.2 8.7 5 30 5 0.37 16.5 67 0.1 7 CEZ12V 11.4 12 12.6 5 30 5 0.7 26 44 0.1 10 CEZ16V 15.3 16 17.1 5 35 5 0.5 27 35 0.1 14 CEZ20V 18.8 20 21.2 5 70 5 0.35 30.5 29 0.1 17.6 CEZ24V 22.8 24 25.6 5 70 5 0.6 36.5 26 0.1 19 CEZ30V 28.0 30 32.0 2 100 2 1.25 47.5 21 0.1 27 CEZ36V 34.0 36 38.0 2 100 2 2.6 63 18 0.1 32.5 *1: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. TLP1 TLP2 *2: ITLP = 16 A *3: VR = 0 V, f = 1 MHz Marking List Marking (CEZ5V6) Type No. Marking Type No. Marking 1 2 CEZ5V6 CEZ16V LL M7 LL CEZ6V2 LM CEZ20V M9 CEZ6V8 CEZ24V LN MB CEZ8V2 LQ CEZ30V MD CEZ12V CEZ36V M4 MF Land Pattern Dimensions (for reference only) (Unit: mm) 2020 2 2020-10-26 Toshiba Electronic Devices & Storage Corporation