X-On Electronics has gained recognition as a prominent supplier of CRS09(TE85L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CRS09(TE85L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CRS09(TE85L,Q,M) Toshiba

CRS09(TE85L,Q,M) electronic component of Toshiba
CRS09(TE85L,Q,M) Toshiba
CRS09(TE85L,Q,M) Schottky Diodes & Rectifiers
CRS09(TE85L,Q,M)  Semiconductors

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See Product Specifications
Part No. CRS09(TE85L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Diode Schottky 30V 1.5A Vf=0.46V
Datasheet: CRS09(TE85L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
677: USD 0.0961 ea
Line Total: USD 65.06 
Availability - 3229
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ: 677  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 3
Multiples : 1
3 : USD 0.1255

2429
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2184
25 : USD 0.1988
100 : USD 0.175
110 : USD 0.161
295 : USD 0.1512
3000 : USD 0.1456

2910
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1748

3229
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 677
Multiples : 1
677 : USD 0.0961
730 : USD 0.0891
1000 : USD 0.0889
2000 : USD 0.0864

1920
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 747
Multiples : 1
747 : USD 0.1316
1000 : USD 0.1272

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CRS09(TE85L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CRS09(TE85L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CRS09 TOSHIBA Schottky Barrier Diode CRS09 Secondary Rectification in Switching Regulators Unit: mm Reverse-Current Protection in Mobile Devices Repetitive peak reverse voltage : V = 30 V RRM Average forward current : I = 1.5 A F (AV) Peak forward voltage : V = 0.46 V (max) FM Small, thin package suitable for high-density board assembly TM Toshiba Nickname: S-FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Average forward current I 1.5 (Note 1) A F (AV) Non-repetitive peak forward surge current I 30 (50 Hz) A FSM Junction temperature T 40 to 150 C j JEDEC Storage temperature T 40 to 150 C stg JEITA Note 1: Ta = 84C Device mounted on a ceramic board Board size : 50 mm 50 mm TOSHIBA 3-2A1S Soldering land size : 2 mm 2 mm Weight: 0.013 g (typ.) Board thickness : 0.64 mm Rectangular waveform : = 180, V = 15 V R Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.35 FM (1) FM Peak forward voltage V I = 1.0 A (pulse test) 0.415 V FM (2) FM V I = 1.5 A (pulse test) 0.43 0.46 FM (3) FM I V = 5 V (pulse test) 0.8 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 10 50 RRM (2) RRM Junction capacitance C V = 10 V, f = 1 MHz 90 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 70 soldering land size 2 mm 2 mm board thickness 0.64 mm Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board board size 50 mm 50 mm 140 soldering land size 6 mm 6 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 2000-04 1 2018-07-18 CRS09 Marking Abbreviation Code Part No. S9 CRS09 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristic compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The followings are the general derating method that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF (AV) and Tj be below 120C. When using this device, take the margin into consideration by using an allowable Ta max-IF (AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that a device be used at a Tj of below 120C. 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-07-18

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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