MBR6045WT ON Semiconductor

MBR6045WTG Switch Mode Power Rectifier The Switch Mode power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features MBR6045WTG THERMAL CHARACTERISTICS (Per Diode) Rating Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.0 C/W JC ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) V Volts F @ I = 30 Amps, T = 25C 0.62 F C @ I = 30 Amps, T = 125C 0.55 F C @ I = 60 Amps, T = 25C 0.75 F C Instantaneous Reverse Current (Note 2) I mA R @ Rated DC Voltage, T = 25C 1.0 C @ Rated DC Voltage, T = 100C 50 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle < 2.0% TYPICAL ELECTRICAL CHARACTERISTICS 100 1000 100 T = 150C C 10 T = 100C C 10 1 0.1 150C 100C T = 25C C T = 25C C 0.01 1 0 10 20 30 40 50 100 200 300 400 500 600 700 800 V , REVERSE VOLTAGE (VOLTS) v , INSTANTANEOUS FORWARD VOLTAGE (mV) R F Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage