X-On Electronics has gained recognition as a prominent supplier of CRS10I30B(TE85L,QM Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CRS10I30B(TE85L,QM Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CRS10I30B(TE85L,QM Toshiba

CRS10I30B(TE85L,QM electronic component of Toshiba
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See Product Specifications
Part No.CRS10I30B(TE85L,QM
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 50Hz 0.7A IFM
Datasheet: CRS10I30B(TE85L,QM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0643 ea
Line Total: USD 192.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1106
6000 : USD 0.1046
12000 : USD 0.0986
18000 : USD 0.0927
24000 : USD 0.0867

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0643

   
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We are delighted to provide the CRS10I30B(TE85L,QM from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CRS10I30B(TE85L,QM and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CRS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS10I30A Secondary Rectification in Switching Regulators Unit: mm Reverse-Current Protection in Mobile Devices Forward voltage: V = 0.39 V (max) I = 0.7 A FM FM Forward current (AV): I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for high-density board assembly due to the use of a small TM surface-mount package, S-FLAT 0.9 0.1 0.16 Absolute Maximum Ratings (Ta = 25C) + 0.2 1.6 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM ANODE Forward current (AV) I 1.0 (Note 1) A CATHODE F (AV) Peak one-cycle surge current I 20 (50 Hz) A FSM Junction temperature T 150 C j JEDEC Storage temperature T -55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 3-2A1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.013 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 51C: Device mounted on a glass-epoxy board Board size: 50 mm 50 mm Soldering size: 6 mm 6 mm Board thickness: 1.6 mm Rectangular waveform ( = 180), V = 15 V R Start of commercial production 2009-11 1 2013-11-01 0 ~ 0.1 2.6 0.1 3.5 0.2 0.98 0.1 0.65 0.2 0.65 0.2 CRS10I30A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A (pulse test) 0.27 FM (1) FM Peak forward voltage V V I = 0.7 A (pulse test) 0.35 0.39 FM (2) FM V I = 1.0 A (pulse test) 0.37 FM (3) FM I V = 5.0 V (pulse test) 10 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 20 60 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 50 pF j R Device mounted on a ceramic board board size: 50 mm 50 mm 70 soldering land: 2 mm 2 mm board thickness: 0.64 mm Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board board size: 50 mm 50 mm 140 soldering land: 6 mm 6 mm board thickness: 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Marking Part No.(or abbreviation code) Cathode dot Abbreviation Code Part No. Anode Cathode SF CRS10I30A SF Cathode mark and Lot code Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 2 2013-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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