CUZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type CUZ Series Applications Voltage surge protection Features Small package The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit 1 2 1: Cathode 2: Anode USC Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25C) Characteristics Symbol Rating Unit *1 Power dissipation P 200 mW D *2 P 600 mW D Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25C) *3 *3 Electrostatic discharge voltage Electrostatic discharge voltage Type Peak pulse Maximum peak Type Peak pulse Maximum peak *4 *4 *4 *4 No. Contact Air power pulse current No. Contact Air power pulse current V (kV) P (W) I (A) V (kV) P (W) I (A) ESD PK PP ESD PK PP CUZ5V6 30 155 12 CUZ16V 30 200 5.5 CUZ6V2 30 175 11 CUZ20V 30 200 5 CUZ6V8 30 180 10 CUZ24V 30 200 4.5 CUZ8V2 30 200 8.5 CUZ30V 20 200 4 CUZ12V 30 200 7 CUZ36V 12 200 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimensions of 4 mm 4 mm. 2 *2: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm *3: according to IEC61000-4-2 *4: according to IEC61000-4-5, tp = 8 / 20 s Start of commercial production 2020-07 2020 1 2020-10-26 Toshiba Electronic Devices & Storage Corporation CUZ Series CUZ series Electrical Characteristics (Unless otherwise specified, T = 25 C) a Type No. Zener Voltage Dynamic Impedance Dynamic Clamp Total Reverse Current resistance voltage capacitance *1 *1*2 *3 V (V) Test Current Z () Test Current R () V (V) C (pF) I (A) Test Voltage Z Z DYN C t R I (mA) I (mA) V (V) Z Z R Min Typ. Max Max Typ. Typ. Typ. Max CUZ5V6 5.3 5.6 6.0 5 30 5 0.16 9 125 1 3.5 CUZ6V2 5.8 6.2 6.6 5 30 5 0.21 10 105 2.5 5.0 CUZ6V8 6.4 6.8 7.2 5 30 5 0.27 13 88 1.5 5.5 CUZ8V2 7.7 8.2 8.7 5 30 5 0.37 16.5 67 0.1 7 CUZ12V 11.4 12 12.6 5 30 5 0.7 26 44 0.1 10 CUZ16V 15.3 16 17.1 5 35 5 0.5 27 35 0.1 14 CUZ20V 18.8 20 21.2 5 70 5 0.35 30.5 29 0.1 17.6 CUZ24V 22.8 24 25.6 5 70 5 0.6 36.5 26 0.1 19 CUZ30V 28.0 30 32.0 2 100 2 1.25 47.5 21 0.1 27 CUZ36V 34.0 36 38.0 2 100 2 2.6 63 18 0.1 32.5 *1: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. TLP1 TLP2 *2: ITLP = 16 A *3: VR = 0 V, f = 1 MHz Marking List Marking (CUZ5V6) Type No. Marking Type No. Marking 1 2 CUZ5V6 CUZ16V LL M7 LL CUZ6V2 CUZ20V LM M9 CUZ6V8 CUZ24V LN MB CUZ8V2 CUZ30V LQ MD CUZ12V CUZ36V M4 MF Land Pattern Dimensions (for reference only) (Unit: mm) 2020 2 2020-10-26 Toshiba Electronic Devices & Storage Corporation