HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) JEDEC JEITA TOSHIBA 2-2J1A Weight: 6.8mg (typ.) Q1 Absolute Maximum Ratings (Ta = 25C) Marking Characteristic Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B Start of commercial production 1992-10 1 2014-03-01 HN1B04FU Q2 Absolute Maximum Ratings (Ta = 25 C) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B Q1,Q2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector power dissipation P * 200 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Q1 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 60V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h (Note) V = 6V, I = 2mA 120 400 FE CE C Collector-emitter V I = 100mA, I = 10mA 0.1 0.25 V CE (sat) C B saturation voltage Transition frequency f V = 10V, I = 1mA 150 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 2 pF ob CB E Q2 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h (Note) V = 6V, I = 2mA 120 400 FE CE C Collector-emitter V I = 100mA, I = 10mA 0.1 0.3 V CE (sat) C B saturation voltage Transition frequency f V = 10V, I = 1mA 120 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 4 pF ob CB E Note: h Classification Y (Y): 120 to 240, GR (G): 200 to 400 FE ( ) Marking Symbol 2 2014-03-01