HN2D02FU,LF Toshiba

HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF(3) = 0.98 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM 1 6 Reverse voltage V 80 V R 2 Maximum (peak) forward current I 240 * mA 5 FM Average forward current I 80 * mA 3 4 O Surge current (10 ms) I 1 * A FSM US6 Power dissipation P (Note 4) 200 mW D JEDEC T (Note 2) 150 j Junction temperature C JEITA T (Note 3) 125 j TOSHIBA 1-2T1E T (Note 2) 55 to 150 stg Weight: 6.8 mg (typ.) Storage temperature C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6). * : This is absolute maximum rating of single diode (Q1, Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 of the single diode one. Start of commercial production 1990-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN2D02FU Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.62 F (1) F Forward voltage V I = 10 mA 0.75 F (2) F V V I = 100 mA 0.98 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MH 0.5 3.0 pF T R z Reverse recovery time t I = 10mA (Fig.1) 1.6 4.0 ns rr F Marking Pin Assignment (Top View) Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation