MUZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type MUZ Series Applications Voltage surge protection Features Small package The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit 1: Anode 2: N.C. 3: Cathode USM Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25C) Characteristics Symbol Rating Unit *1 Power dissipation P 150 mW D *2 P 600 mW D Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25C) *3 *3 Electrostatic discharge voltage Electrostatic discharge voltage Type No. Peak pulse Peak pulse Type No. Peak pulse Peak pulse *4 *4 *4 *4 Contact Air power current Contact Air power current V (kV) P (W) I (A) V (kV) P (W) I (A) ESD PK PP ESD PK PP MUZ5V6 30 155 12 MUZ16V 30 200 5.5 MUZ6V2 30 175 11 MUZ20V 30 200 5 MUZ6V8 30 180 10 MUZ24V 30 200 4.5 MUZ8V2 30 200 8.5 MUZ30V 20 200 4 MUZ12V 30 200 7 MUZ36V 12 200 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). 2 *1: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm x 3 2 *2: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm *3: according to IEC61000-4-2 *4: according to IEC61000-4-5, tp = 8 / 20 s Start of commercial production 2020-07 2020 1 2020-10-26 Toshiba Electronic Devices & Storage Corporation MUZ Series MUZ series Electrical Characteristics (Unless otherwise specified, Ta = 25C) Zener Voltage Dynamic Impedance Dynamic Clamp Total Reverse Current Type No. resistance voltage capacitance *1 *1*2 *3 V (V) Test Current Z () Test Current R () V (V) C (pF) I (A) Test Voltage Z Z DYN C t R IZ (mA) IZ (mA) VR (V) Min Typ. Max Max Typ. Typ. Typ. Max MUZ5V6 5.3 5.6 6.0 5 30 5 0.16 9 125 1 3.5 MUZ6V2 5.8 6.2 6.6 5 30 5 0.21 10 105 2.5 5.0 MUZ6V8 6.4 6.8 7.2 5 30 5 0.27 13 88 1.5 5.5 MUZ8V2 7.7 8.2 8.7 5 30 5 0.37 16.5 67 0.1 7 MUZ12V 11.4 12 12.6 5 30 5 0.7 26 44 0.1 10 MUZ16V 15.3 16 17.1 5 35 5 0.5 27 35 0.1 14 MUZ20V 18.8 20 21.2 5 70 5 0.35 30.5 29 0.1 17.6 MUZ24V 22.8 24 25.6 5 70 5 0.6 36.5 26 0.1 19 MUZ30V 28.0 30 32.0 2 100 2 1.25 47.5 21 0.1 27 MUZ36V 34.0 36 38.0 2 100 2 2.6 63 18 0.1 32.5 *1: TLP parameters: Z = 50 , t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns, 0 p r 1 2 extraction of dynamic resistance using least squares fit of TLP characteristics between ITLP1 = 16 A and ITLP2 = 30 A. *2: ITLP = 16 A *3: VR = 0 V, f = 1 MHz Marking List Marking (MUZ5V6) Type No. Marking Type No. Marking MUZ5V6 J1 MUZ16V J7 MUZ6V2 MUZ20V J2 JA J1 MUZ6V8 J3 MUZ24V JB MUZ8V2 MUZ30V J4 JC MUZ12V J6 MUZ36V JD Land Pattern Dimensions (for reference only) (Unit: mm) 2020 2 2020-10-26 Toshiba Electronic Devices & Storage Corporation