RN1101MFV to RN1106MFV Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN2101MFV to RN2106MFV 3. Equivalent Circuit 4. Bias Resistor Values Part No. R1 (k) R2 (k) RN1101MFV 4.7 4.7 RN1102MFV 10 10 RN1103MFV 22 22 RN1104MFV 47 47 RN1105MFV 2.2 47 RN1106MFV 4.7 47 Start of commercial production 2005-02 2021 2021-08-18 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0RN1101MFV to RN1106MFV 5. Packaging and Pin Assignment 1: Base 2: Emitter 3: Collector VESM 6. Orderable part number Orderable part number AEC-Q101 Note Note RN1101MFV RN1101MFV,L3F General Use RN1101MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1101MFV,L3XHF YES Automotive Use RN1102MFV RN1102MFV,L3F General Use RN1102MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1102MFV,L3XHF YES Automotive Use RN1103MFV RN1103MFV,L3F General Use RN1103MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1103MFV,L3XHF YES Automotive Use RN1104MFV RN1104MFV,L3F General Use RN1104MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1104MFV,L3XHF YES Automotive Use RN1105MFV RN1105MFV,L3F General Use RN1105MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1105MFV,L3XHF YES Automotive Use RN1106MFV RN1106MFV,L3F General Use RN1106MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1106MFV,L3XHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 2021 2021-08-18 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0