TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R = 1.7 (typ.) 6.6 0.2 DS (ON) 5.34 0.13 0.58MAX High forward transfer admittance: Y = 2.2 S (typ.) fs Low leakage current: I = 10A (max) (V = 600 V) DSS DS Enhancement-mode: V = 2.4 to 4.4 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 0.12 Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 3.5 D 1 3 2 Drain current A Pulse (t = 1 ms) I 14 1. GATE DP (Note 1) 2. DRAIN HEAT SINK Drain power dissipation (Tc = 25C) P 80 W D 3. SOURCE Single pulse avalanche energy E 132 mJ AS (Note 2) JEDEC Avalanche current I 3.5 A AR JEITA Repetitive avalanche energy (Note 3) E 8 mJ AR TOSHIBA 2-7K1A Channel temperature T 150 C ch Weight : 0.36 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Internal Connection Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 1.56 C/W th (ch-c) Thermal resistance, channel to ambient R 125 C/W th (ch-a) Note 1: Please use devices on conditions that the channel temperature is below 150C. 1 Note 2: V = 90 V, T = 25C (initial), L = 18.9 mH, R = 25 , I = 3.5 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2010-03-09 1.01MAX 2.3 0.1 6.1 0.12 1.08 0.2 0.07 0.07 +0.4 10.0 0.6 +0.25 1.52 0.12 TK4P60DA Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.4 4.4 V th DS D Drain-source ON-resistance R V = 10 V, I = 1.8 A 1.7 2.2 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 1.8 A 0.6 2.2 S fs DS D Input capacitance C 490 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 3 rss DS GS Output capacitance C 55 oss 10 V I = 1.8 A V D OUT Rise time t 18 r V GS 0 V R = L Turn-on time t on 40 50 111 Switching time ns Fall time t 8 f V 200 V DD Duty 1%, t = 10 s Turn-off time t w 55 off Total gate charge Q 11 g Gate-source charge Q V 400 V, V = 10 V, I = 3.5 A 6 nC DD GS D gs Gate-drain charge Q 5 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 3.5 A DR (Note 1) Pulse drain reverse current (Note 1) I 14 A DRP Forward voltage (diode) V I = 3.5 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 3.5 A, V = 0 V, 1000 ns rr DR GS Reverse recovery charge Q dI /dt = 100 A/s 5.0 C DR rr Marking (Note 4) TK4P60DA Part No. (or abbreviation code) Lot No. Note 4: * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) 2 2010-03-09