TLP104 TOSHIBA PHOTOCOUPLER GaAAs IRED & PHOTO-IC TLP104 IPM (Intelligent Power Module) Unit: mm Industrial Inverter Operate at high ambient temperatures up to 125C The Toshiba TLP104 consists of GaAAs infrared light emitting diodes and integrated high gain, high-speed photodetectors. The TLP104 is housed in the SO6 package. The output stage is an open collector type. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 15 kV/s. TLP104 guarantees minimum and maximum of propagation delay time, switching speed dispersion, and high common mode transient immunity. Therefore TLP104 is suitable for isolation interface between IPM (Intelligent Power Module) in motor control application. Inverter logic type (Open collector output) Package type: SO6 Guaranteed performance over temperature: -40 to 125C JEDEC Power supply voltage: -0.5 to 30 V JEITA Threshold Input Current: I = 5.0 mA (max) FHL TOSHIBA 11-4L1 Weight: 0.08 g(typ.) Propagation delay time (t /t ): t = 400ns (max) pHL pLH pHL t = 550ns (max) pLH Pin Configuration (Top View) Switching Time Dispersion( t -t ): 400ns (max) pHL pLH Common mode transient immunity : 15kV/s (min) 1 6 V CC 1:ANODE Isolation voltage : 3750Vrms (min) 3:CATHODE 4:GND UL approved : UL1577, File No.E67349 5 5:V (Output) O cUL approved :CSA Component Acceptance Service 6:V CC GND 4 3 No. 5A, File No.E67349 SHIELD Option (V4) VDE approved : Schematic I CC DIN EN60747-5-5 EN60065 EN60950-1 (Note 1) V CC 6 IF IOIO EN62368-1(Pending) 1+ V O CQC-approved: GB4943.1, GB8898 Thailand Factory 5 3 - Note1 : When a EN60747-5-5 approved type is needed, GND SHIELD 4 Please designate Option(V4) Construction Mechanical Ratings Truth Table Creepage distance 5.0 mm (min) Input LED Output Clearance distance 5.0 mm (min) H ON L OFF H L Insulation thickness 0.4 mm (min) Start of commercial production 2009-10 1 2017 - 0 5- 2 5 TLP104 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward Current I 25 mA F Forward Current Derating (Ta 110C) I /C -0.67 mA/C F Pulse Forward Current (Note 1) I 50 mA FP Pulse Forward Current Derating (Ta 110C) I /C -1.34 mA/C FP Reverse Voltage V 5 V R Input Power Dissipation P 40 mW D Input power Dissipation Derating (Ta 110C) P /C -1.0 mW/C D Output Current (Ta 125C) I 8 mA O Output Voltage V -0.5 to 30 V O Supply Voltage V -0.5 to 30 V CC Output Power Dissipation P 80 mW O Output Power Dissipation Derating (Ta 110C) P /C -2.0 mW/C O Operating Temperature Range T -40 to 125 C opr Storage Temperature Range T -55 to 125 C stg Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC,60 s, R.H. 60%,Ta=25C) (Note 2) BV 3750 V s rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Pulse width 10s, duty=10%. Note 2: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input Current , High Level I 7.5 - 15 mA FHL Input Voltage , Low Level V 0 - 0.8 V FLH Supply Voltage* V 4.5 - 30 V CC Operating Temperature T -40 - 125 C opr * This item denotes operating range, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2017-05-25 Detector LED