TLP109 TOSHIBA Photocoupler IRED & PhotoIC TLP109 Programmable Controllers Unit: mm Industrial Inverters Switching Power Supplies The Toshiba TLP109 mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP109 consists of a high-output-power infrared emitting diode optically coupled to a high-speed photodiode-transistor chip. The TLP109 is housed in the SO6 package and guarantees a creepage distance of 5.0 mm, a clearance of 5.0 mm and an insulation thickness of 0.4 mm. Therefore, the TLP109 meets the reinforced insulation class requirements of international safety standards. Isolation voltage: 3750 Vrms (min) Switching speed: t = 0.8 s, t = 0.8 s (max) pHL pLH R = 1.9 k L JEDEC TTL-compatible JEITA UL-recognized : UL 1577, File No.E67349 TOSHIBA 11-4L1 cUL-recognized : CSA Component Acceptance Service No.5A Weight: 0.08 g (typ.) File No.E67349 VDE-approved: EN 60747-5-5, 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1 : When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (Top View) Schematic IF I CC VCC 1: ANODE 1 3: CATHODE 6 I O 4: EMITTER (GND) V O 5: COLLECTOR (OUTPUT) VF 5 6: V CC GND 3 4 SHIELD Construction Mechanical Ratings Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) Start of commercial production 2008-07 2019 1 2019-05-27 Toshiba Electronic Devices & Storage Corporation TLP109 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward Current Derating (Ta 95 C) IF/C -0.36 mA/C Pulse forward current (Note 1) I 40 mA FP Peak transient forward current (Note 2) I 1 A FPT Reverse voltage V 5 V R Power dissipation (Note 3) P 40 mW D Output current I 8 mA O Output Current Derating (Ta 95 C) IO/C -0.3 mA/C Peak output current I 16 mA OP Supply voltage V 0.5 to 30 V CC Output voltage V 0.5 to 20 V O Output power dissipation (Note 4) P 100 mW O Operating temperature range T 55 to 125 opr C Storage temperature range T 55 to 125 C stg Lead solder temperature (10 s) T 260 sol C Isolation Voltage BV 3750 Vrms S (AC, 60 s, R.H. 60 %) (Note 5) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 50 % duty cycle, 1 ms pulse width. Derate 0.72 mA / C above 95 C. Note 2: Pulse width 1 s, 300 pps. Note 3: Derate 0.72 mW / C above 95 C. Note 4: Derate 1.8 mW / C above 95 C. Note 5: Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2019 2 2019-05-27 Toshiba Electronic Devices & Storage Corporation Detector LED