TLP170A(F) Toshiba

TLP170A TOSHIBA Photocoupler Photorelay TLP170A Telecommunications Unit: mm Control Equipment Data Acquisition System Security Equipment Measurement Equipment The Toshiba TLP170A consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 4-pin SOP package. This photorelay requires 1mA of LED current to turn it on. It is suitable for applications that need electrical power savings. 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm Normally open (1-Form-A) device Peak off-state voltage: 60 V (min) Trigger LED current: 1 mA (max) ON-state current: 400 mA (max) ON-state resistance: 2 (max) Isolation voltage: 1500 Vrms (min) JEDEC UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A JEITA File No.E67349 TOSHIBA 11-5H1 VDE-approved: EN 60747-5-5 (Note 1) Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 4 2 3 1: Anode 2: Cathode 3: Drain 4: Drain Internal Circuit 1 4 2 3 Start of commercial production 2009-06 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP170A Absolute Maximum Rating (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Reverse voltage V 5 V R LED Pulse forward current(100 s pulse, 100 pps) I 1 A FP P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction temperature T 125 C j OFF-state output terminal voltage V 60 V OFF ON-state current I 400 mA ON Forward current derating (Ta 25C) I /C 4.0 mA/C ON Detector Output power dissipation P 300 mW C Output power dissipation derating (Ta 25C) P / C 3.0 mW / C C Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Operating temperature T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 48 V DD Forward current I 2 25 mA F ON-state current I 320 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 pF T OFF-state current I V = 60 V 1 1000 nA OFF OFF Detector Capacitance C V = 0 V, f = 1 MHz 130 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation