TLP190B(TPR,U,C,F) Toshiba

TLP190B TOSHIBA Photocoupler IRED & Photo Diode Arry TLP190B Telecommunications Unit: mm Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers The TOSHIBA TLP190B mini-flat photocoupler is suitable for surface- mount assembly. The TLP190B consists of an infrared emitting diode optically coupled to a series connected photodiode array which is suitable for MOSFET gate drivers. TLP190 : Mini Flat Package, 4Pin, one circuit. Open voltage: 7.0V (min) Short current: 12.0 A (min) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11 4C1 File No.E67349 Weight: 0.09 g (typ.) Short Current Short Current Type Marking of Classification Name Classification (min) I Pin Configuration (top view) F C20 20 A 20 TLP190B 10 mA Standard 12 A 20, blank 1 6 Note: Application type name for certification test, please use standard product type name, i.e. TLP190B(C20) : TLP190B 3 4 1. Anode 3. Cathode 4. Cathode 6. Anode Start of commercial production 1990-11 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP190B Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current I /C 0.5 mA / C F derating (Ta 25C) Pulse forward current I 1 A FP (100s pulse 100pps) LED Reverse voltage V 3 V R P 100 mW Diode power dissipation D P /C -1.0 mW/C Diode power dissipation derating D (Ta >25C) Junction temperature T 125 C j Forward current I 50 A FD Reverse voltage V 10 V RD Detector Output power dissipation P 0.5 mW O Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 2500 Vrms S (AC, 60 s, R.H. 60 %) Note 1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Forward current I 20 25 mA F Operating temperature Topr 25 85 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation