TLP3906 Photocouplers Infrared LED & Photo Diode TLP3906TLP3906TLP3906TLP3906 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Measuring Instruments MOSFET Gate Drivers 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP3906 is a photocoupler in the SO6 package that consists of an infrared LED optically coupled to a photodiode array. The photodiodes are connected in series, making the TLP3906 suitable for MOS gate drive applications. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Open voltage: 7 V (min) (2) Short current: 12 A (min) (3) Isolation voltage: 3750 Vrms (min) (4) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) Option (V4) Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4). Table Table Short-Circuit Current (Note) (Unless otherwise specified, TShort-Circuit Current (Note) (Unless otherwise specified, T = 25 = 25 )) Table Table Short-Circuit Current (Note) (Unless otherwise specified, TShort-Circuit Current (Note) (Unless otherwise specified, T = 25 = 25 )) a aaa Short-Circuit Current I SC Rank I Rank Marking Test Condition Unit SC (min) C20 C I = 10 mA 20 A F None C, Blank I = 10 mA 12 F Note: Specify both the part number and a rank in this format when ordering. Example: TLP3906(C20) For safety standard certification, however, specify the part number alone. Example: TLP3906(C20,E TLP3906 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode (Input) 3: Cathode (Input) 4: Cathode (Output) 6: Anode (Output) 11-4M1S Start of commercial production 2014-02 2019 2019-12-22 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TLP3906 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 30 mA F Input forward current (T = 125 ) 10 a Input forward current derating (T 100 ) I /T -0.8 mA/ a F a Input power dissipation P 50 mW D Input power dissipation derating (T 100 ) P /T -1.3 mW/ a D a Input reverse voltage V 3 V R Detector Output forward current I 50 A FD Output reverse voltage V 10 V RD Output power dissipation (-40 T 125 ) P 0.5 mW a O Common Operating temperature T -40 to 125 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Isolation voltage AC, 60 s, R.H. 60 % BV (Note 1) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 7. 7. 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note)Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input forward current I 12 15 mA F Operating temperature T -25 100 opr Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 8. 8. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 8. 8. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage V I = 10 mA 1.5 1.65 1.8 V F F Input reverse current I V = 3 V 10 A R R Input capacitance C V = 0 V, f = 1 MHz 45 pF t 2019 2019-12-22 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0