TLP591B TOSHIBA Photocoupler IRED & Photo-Diode Array TLP591B Unit: mm Telecommunications Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers The TOSHIBA TLP591B consists of an infrared emitting diode optically coupled to a series-connected photo-diode array in a six-lead plastic DIP package. The TLP591B is suitable for MOS FET gate drivers. The TLP591B has an internal shunt resistor to optimize switching speed. UL-recognized: UL 1577, File No.E67349 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA TOSHIBA 11-7A9S F Weight: 0.39 g (typ.) Forward current derating I /C -0.5 mA /C F (Ta 25C) Pin Configuration (top view) Pulse forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 3 V R 6 1 P 100 mW Diode power dissipation D 2 Diode power dissipation derating P /C -1.0 mW/C D (Ta 25C) 3 4 Junction temperature Tj 125 C Forward current I 50 A FD 1. : Anode(LED) 2. : Cathode(LED) Reverse voltage V 10 V RD 3. : NC Output power dissipation P 0.5 mW O 4. : Cathode 6. : Anode Junction temperature Tj 125 C Storage temperature range T -55 to 125 C stg Operating temperature range T -40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 2500 S V rms (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted Start of commercial production together, and pins 4 and 6 shorted together. 1990-11 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED TLP591B Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Forward current I 20 25 mA F Operating temperature T -25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.2 1.4 1.7 V F F Reverse current I V = 3 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 60 pF T Forward voltage V I = 10 A 7 V FD FD Reverse current I V = 10 V 7 A RD RD Coupled Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Open voltage V I = 20 mA 7 8 V OC F Short Current I I = 20 mA 24 40 A SC F Isolation Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) C V = 0 V, f = 1 MHz 0.8 pF S S 10 14 Isolation resistance R V = 500 V, R.H. 60 % 510 10 S S Isolation voltage BV AC, 60 s 2500 Vrms S Switching Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Turn-on time t 0.2 ms ON I = 20 mA, C = 1000 pF F L (Note 2) Turn-off time t 3 ms OFF Note 2: Switching time test circuit V I OUT F I F C L V OUT 5 V 1 V 0 V t t ON OFF 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED