TLP2409 Photocouplers Infrared LED & Photo IC TLP2409TLP2409TLP2409TLP2409 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Digital Interfacing for Instrumentation and Control Devices Industrial Inverters Switching Power Supplies 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2409 consists of a high output power infrared LED coupled with a high-speed photodiode- transistor chip. It is housed in the SO8 package. The TLP2409 features an operating temperature range of up to 125, making it ideal for applications like DC-DC converters and industrial equipment which require operations at high temperatures. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Package: SO8 (2) Propagation delay time: t = 0.8 s, t = 0.8s (max) R = 1.9 k pHL pLH L (3) Operating temperature: -55 to 125 (4) Isolation voltage: 3750 Vrms (min) (5) TTL-compatible (6) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5 (Note 1)(Note 1)(Note 1) Option (V4) Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4). 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND (Emitter) 6: Output (Collector) 7: N.C. 8: V CC 11-5K1S Start of commercial production 2010-03 2016-2020 2020-02-17 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TLP2409 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1F bypass capacitor must be connected between pin 8 and pin 5. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. Mechanical ParametersMechanical Parameters 6.1. 6.1. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 4.0 mm Clearance 4.0 Internal isolation thickness 7. 7. 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current (T 110 ) I 25 mA a F Input forward current derating (T 110 ) I /T -0.67 mA/ a F a Input forward current (pulsed) (T 110 ) I (Note 1) 50 mA a FP Input forward current derating (T 110 ) I /T -1.34 mA/ a FP a (pulsed) Input reverse voltage V 5 V R Input power dissipation (T 110 ) P 40 mW a D Input power dissipation (T 110 ) P /T -1.0 mW/ a D a derating Detector Output current (T 95 ) I 16 mA a O Output current derating (T 95 ) I /T -0.3 mA/ a O a Output voltage V -0.5 to 20 V O Supply voltage V -0.5 to 30 CC Output power dissipation (T 95 ) P 100 mW a O Output power dissipation (T 95 ) P /T -1.8 mW/ a O a derating Common Operating temperature T -55 to 125 opr Storage temperature T -55 to 150 stg Lead soldering temperature (10 s) T 260 sol Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 1 ms, duty = 50 % Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 2016-2020 2020-02-17 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0