TLP5752H(D4TP4,E Toshiba

TLP5752H Photocouplers Infrared LED & Photo IC TLP5752HTLP5752HTLP5752HTLP5752H 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Industrial Inverters MOSFET Gate Drivers IGBT Gate Drivers Induction Cooktop and Home Appliances Air Conditioner Inverters 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP5752H consists of an infrared LED and an integrated high-gain, high-speed photodetector and is housed in the 6-pin SO6L package. It provides guaranteed performance and specifications at temperature up to 125 . The TLP5752H is 50 % smaller than the 8-pin DIP package and meets the reinforced insulation class requirements of international standards. Therefore the mounting area can be reduced in equipment requiring the safety standard certification. The TLP5752H has an internal faraday shield that provides a guaranteed common-mode transient immunity of 35 kV/s. In particular, the TLP5752H has rail to rail output, and this enables stable operation and better switching performance in system. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Buffer logic type (totem pole output) (2) Output peak current: 2.5 A (max) (3) Operating temperature: -40 to 125 (4) Supply current: 3.0 mA (max) (5) Supply voltage: 15 to 30 V (6) Threshold input current: 4 mA (max) (7) Propagation delay time: 150 ns (max) (8) Common-mode transient immunity: 35 kV/s (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2019-06 2019-2020 2020-09-01 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TLP5752H 4. 4. 4. 4. Packaging (Note)Packaging (Note)Packaging (Note)Packaging (Note) TLP5752H TLP5752H(LF4) 11-4N1A 11-4N101A Note: Lead forming option: (LF4) Taping option: (TP4) 5. Pin Assignment 5. 5. 5. Pin AssignmentPin AssignmentPin Assignment 1: Anode 2: N.C. 3: Cathode 4: GND 5: V (Output) O 6: V CC 6. 6. 6. 6. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 1-F bypass capacitor must be connected between pin 6 and pin 4. Note: It is not recommended that a current flow is applied to the body diode at the output stage MOSFET. 2019-2020 2020-09-01 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0