TLP631,TLP632 TOSHIBA Photocoupler GaAs IRed & PhotoTransistor TLP631, TLP632 Programmable Controllers Unit: mm AC / DCInput Module Solid State Relay The TOSHIBA TLP631 and TLP632 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 has no base internal connection for highEMI environments. Collector emitter voltage: 55 V (min) Current transfer ratio: 50% (min) Rank GB: 100% (min) Isolation voltage: 5000 V (min) rms UL recognized: UL1577, file no. E67349 TOSHIBA 117A8 Pin Configurations (top view) Weight: 0.4 g (typ.) TLP631 TLP632 1 6 1 6 2 5 2 5 3 4 3 4 1: Anode 1: Anode 2: Cathode 2: Cathode 3: N.C. 3: N.C. 4: Emitter 4: Emitter 5: Collector 5: Collector 6: Base 6: N.C Start of commercial production 1983/05 1 2014-09-22 TLP631,TLP632 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 60 mA F Forward current derating (Ta 39C) I / C 0.7 mA / C F Peak forward current (100 s pulse, 100pps) I 1 A FP Reverse voltage V 5 V R Junction temperature T 125 C j Collectoremitter voltage V 55 V CEO Collectorbase voltage (TLP631) V 80 V CBO Emittercollector voltage V 7 V ECO Emitterbase voltage (TLP631) V 7 V EBO Collector current I 50 mA C Power dissipation P 150 mW C Power dissipation derating (Ta 25C) P / C 1.5 mW / C C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 55 to 100 C opr Lead soldering temperature (10s) T 260 C sol Total package power dissipation P 250 mW T Total package power dissipation derating (Ta 25C) P / C 2.5 mW / C T Isolation voltage (AC, 1 minute, R.H. 60%) BV 5000 S V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Recommended Operating Conditions Characteristic Symbol MinTyp.MaxUnit Supply voltage V 5 24 V CC Forward current I 16 25 mA F Collector current I 1 10 mA C Operating temperature T 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2014-09-22 Detector LED