TPD7107F,BXH Toshiba

TPD7107F TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit TPD7107F 1 channel High-Side N channel Power MOSFET Gate Driver 1. Description TPD7107F is a 1channel high-side N channel power MOSFET gate TPD7107F driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. P-WSON10-0303-0.50-002 2. Uses Junction Boxes for Automotive. Power distribution modules for Automotive. Semiconductor relays. 3. Features AEC-Q100 qualified. Built in the charge pump circuit. Built in the various protection feature and diagnostic output function. The abnormalities in power supply voltage (a voltage fall, excess voltage, reverse connection of power supply) Current sense of load line. Over current (short circuit of load line) Overheating The abnormalities in Drain-source voltage of external FET Active clamp of external FET Protection for disconnection of GND terminal. VDD short of load line (Short circuit between source of external FET and VDD) Disconnection of load line (open). WSON10A package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. Start of commercial production 2020-03 2020 1 2020-04-09 Toshiba Electronic Devices & Storage Corporation TPD7107F 4. Block Diagram . Note: Since a function is explained, it may have omitted in part and may have simplified the functional block in a block, the circuit, the constant, etc. Figure 4.1 Block Diagram 2020 2 2020-04-09 Toshiba Electronic Devices & Storage Corporation