TPN4R806PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN4R806PLTPN4R806PLTPN4R806PLTPN4R806PL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 9.5 nC (typ.) SW (3) Small output charge: Q = 24 nC (typ.) oss (4) Low drain-source on-resistance: R = 3.5 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.3 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 2016-10 2016-2019 2019-10-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TPN4R806PL 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 72 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) 105 Drain current (pulsed) (t = 100 s) (Note 1) I 200 DP Power dissipation (T = 25 ) P 104 W c D Power dissipation (Note 3) 2.67 Power dissipation (Note 4) 0.63 Single-pulse avalanche energy (Note 5) E 28 mJ AS Single-pulse avalanche current (Note 5) I 72 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.43 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) (Note 3) R 56 a th(ch-a) Channel-to-ambient thermal resistance (T = 25 ) (Note 4) R 235 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 48 V, T = 25 (initial), L = 4.3 H, I = 72 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2019 2019-10-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0