.The 2N7002NXBKR is a N-channel MOSFET, manufactured by Nexperia, designed for high-voltage applications. This 60 V MOSFET features a small 3-pin PowerPAK SO-8 package, making it suitable for space-saving circuit designs. Its trench technology ensures low on-resistance, good noise immunity and high switching speeds, making it a reliable switching device. With a drain-source breakdown voltage of 60 V and a drain-source resistance of 0.45 Ohm, this MOSFET is capable of carrying up to 500 mA continuous drain current. Other features include ESD protection diodes, fast switching times, and a wide operating temperature range of up to +175°C. This part is ideal for a variety of applications such as Solar Panel Array, Voltage Regulators, and DC-DC Converters.