TRS4E65F SiC Schottky Barrier Diode TRS4E65FTRS4E65FTRS4E65FTRS4E65F 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Chip design of 2nd generation. (2) High surge current capability : I = 39A (Max) FSM (3) The junction capacitance is small : C = 16 pF (Typ.) j (4) The reverse current is small. : I = 0.2 A (Typ.) R 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode TO-220-2L Start of commercial production 2016-07 2016-2018 2018-06-27 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TRS4E65F 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage V 650 V RRM Forward DC current I 4 A F(DC) Forward pulse current I (Note 1) 40 A FP Non-repetitive peak forward surge current I (Note 2) 39 A FSM I2t limit value I2t 7.61 A2s Junction temperature T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 s Note 2: f = 50 Hz (half-sine wave t = 10 ms) 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Test Condition Max Unit Thermal resistance (junction-to-case) R 2.7 /W th(j-c) Thermal resistance (junction-to-ambient) R 89 /W th(j-a) 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 2 A (pulse measurement) 1.2 V F F Forward voltage V (2) I = 4 A (pulse measurement) 1.45 1.6 V F F Reverse current I V = 650 V (pulse measurement) 0.2 20 A R R Junction capacitance C V = 650 V, f = 1 MHz 16 pF j R 2016-2018 2018-06-27 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0