X-On Electronics has gained recognition as a prominent supplier of TTC008(Q) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTC008(Q) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTC008(Q) Toshiba

Name: TTC008(Q)
Brand: Toshiba
SKU: TTC008Q_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TTC008(Q) electronic component of Toshiba

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See Product Specifications

Part No.	TTC008(Q)
Manufacturer:	Toshiba
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W
Datasheet:	TTC008(Q) Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.3239 ea
Line Total: USD 2.32

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

TTC008(Q) More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 18 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 2.3239 10 : USD 0.8492 100 : USD 0.6379 200 : USD 0.5342 600 : USD 0.4872 1000 : USD 0.4531 2600 : USD 0.4199

We are delighted to provide the TTC008(Q) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTC008(Q) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

TTC008 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC008TTC008TTC008TTC008 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High collector-emitter voltage: V = 285 V, V = 600 V CEO CES (2) High DC current gain: h = 100 to 200 (I = 0.3 A) FE C (3) Excellent switching times: t = 0.1 s (typ.) f 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector 3. Emitter New PW-Mold2 Start of commercial production 2010-05 2014-04-03 1 Rev.2.0TTC008 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V 600 V CBO Collector-emitter voltage V 600 CES Collector-emitter voltage V 285 CEO Emitter-base voltage V 7 EBO Collector current (DC) (Note 1) I 1.5 A C Collector current (pulsed) (Note 1) I 3 CP Base current I 0.75 B Collector power dissipation P 1.1 W C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . 2014-04-03 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

TOSHIBA LED LIGHTING may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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