TTC011B Bipolar Transistors Silicon NPN Epitaxial Type TTC011BTTC011BTTC011BTTC011B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Amplifiers Audio-Frequency Amplifiers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High collector voltage : V = 230 V (min) CEO (2) Small collector output capacitance : C = 20 pF (typ.) ob (3) High transition frequency : f = 100 MHz (typ.) T (4) Complementary to TTA006B 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V 230 V CBO Collector-emitter voltage V 230 CEO Emitter-base voltage V 5 EBO Collector current (DC) (Note 1) I 1 A C Collector current (pulsed) (Note 1) I 2 CP Base current I 0.5 B Collector power dissipation P 1.5 W C Collector power dissipation (T = 25 ) P 10 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2014-04 2016 Toshiba Corporation 2016-02-09 1 Rev.1.0TTC011B 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 230 V, I = 0 A 200 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 100 EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 A 230 V (BR)CEO C B DC current gain h V = 5 V, I = 0.1 A 100 320 FE CE C Collector-emitter saturation voltage V I = 0.5 A, I = 50 mA 1.5 V CE(sat) C B Base-emitter voltage V V = 5 V, I = 0.5 A 1.0 BE CE C 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 20 pF ob CB E Transition frequency f V = 10 V, I = 0.1 A 100 MHz T CE C 6. 6. Marking (Note)Marking (Note) 6. 6. Marking (Note)Marking (Note) Fig. 6.1 Marking Fig. Fig. Fig. 6.16.16.1 MarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2016 Toshiba Corporation 2016-02-09 2 Rev.1.0