TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012TTC012TTC012TTC012 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High speed switching : t = 0.15 s (typ.) (I = 0.5 A) f C (2) High collector breakdown voltage: V = 800 V , V = 375 V CES CEO 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector 3. Emitter New PW-Mold2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V 800 V CBO Collector-emitter voltage V 800 CES Collector-emitter voltage V 375 CEO Emitter-base voltage V 8 EBO Collector current (DC) (Note 1) I 2.0 A C Collector current (pulsed) (Note 1) I 3.0 CP Base current I 1.0 B Collector power dissipation (T = 25) P 1.1 W a C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2010-08 2016 Toshiba Corporation 2016-01-22 1 Rev.2.0TTC012 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25)) 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25)) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 800 V, I = 0 A 10 A CBO CB E Emitter cut-off current I V = 8 V, I = 0 A 100 nA EBO EB C Collector-base breakdown voltage V I = 1 mA, I = 0 A 800 V (BR)CBO C E Collector-emitter breakdown voltage V I = 10 mA, I = 0 A 375 (BR)CEO C B DC current gain h V = 5 V, I = 1 mA 80 250 FE(1) CE C DC current gain h V = 5 V, I = 0.3 A 100 200 FE(2) CE C Collector-emitter saturation voltage V I = 0.5 A, I = 62.5 mA 0.5 V CE(sat) C B Base-emitter saturation voltage V I = 0.5 A, I = 62.5 mA 1.3 BE(sat) C B 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Switching time (rise time) t See Figure 5.2.1. 0.1 s r V 200 V, R = 400 , CC L Switching time (storage time) t 4.4 stg I = 62.5 mA, I = 125 mA, B1 B2 Switching time (fall time) t 0.15 Duty cycle 1% f Fig. Fig. Fig. Fig. 5.2.15.2.15.2.15.2.1 Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6. Marking (Note) 6. 6. 6. Marking (Note)Marking (Note)Marking (Note) Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2016 Toshiba Corporation 2016-01-22 2 Rev.2.0