X-On Electronics has gained recognition as a prominent supplier of BUZ900 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUZ900 MOSFETs are a product manufactured by TT Electronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUZ900 TT Electronics

BUZ900 electronic component of TT Electronics
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See Product Specifications
Part No.BUZ900
Manufacturer: TT Electronics
Category: MOSFETs
Description: MOSFET TO3 160Volt 8A 125W N CHANNEL MOSFET
Datasheet: BUZ900 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.0453 ea
Line Total: USD 15.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 15.0453
5 : USD 11.6298
10 : USD 9.7051
50 : USD 8.5129
100 : USD 7.9065
250 : USD 7.7962

   
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We are delighted to provide the BUZ900 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUZ900 and other electronic components in the MOSFETs category and beyond.

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BUZ900 MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 12 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE TO3 PCHANNEL ALSO AVAILABLE AS Pin 1 Gate Pin 2 Drain Case Source BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) BUZ900 BUZ901 case V Drain Source Voltage 160V 200V DSX V Gate Source Voltage 14V GSS I Continuous Drain Current 8A D I Body Drain Diode 8A D(PK) P Total Power Dissipation T = 25C 125W D case T Storage Temperature Range 55 to 150C stg T Maximum Operating Junction Temperature 150C j R Thermal Resistance Junction Case 1C/W JC Prelim. 10/94 Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. 39.0 1.1 30.2 0.15 16.9 0.15 20 Max. 1.0BUZ900 MAGNA BUZ901 TEC STATIC CHARACTERISTICS (T = 25C unless otherwise stated) case Characteristic Test Conditions Min. Typ. Max. Unit V = 10V BUZ900 160 GS BV Drain Source Breakdown Voltage V DSX I = 10mA BUZ901 200 D BV Gate Source Breakdown Voltage V = 0 I = 100A 14 V GSS DS G V Gate Source CutOff Voltage V = 10V I = 100mA 0.15 1.5 V GS(OFF) DS D V * Drain Source Saturation Voltage V = 0 I = 8A 12 V DS(SAT) GD D V = 160V DS 10 BUZ900 I Drain Source CutOff Current V = 10V mA DSX GS V = 200V DS 10 BUZ901 yfs* Forward Transfer Admittance V = 10V I = 3A 0.7 2 S DS D DYNAMIC CHARACTERISTICS (T = 25C unless otherwise stated) case Characteristic Test Conditions Min. Typ. Max. Unit C Input Capacitance 500 iss V = 10V DS C Output Capacitance 300 pF oss f = 1MHz C Reverse Transfer Capacitance 10 rss t Turnon Time V = 20V 100 on DS ns t Turn-off Time I = 5A 50 off D * Pulse Test: Pulse Width = 300s , Duty Cycle 2%. Derating Chart 150 125 100 75 50 25 0 0 25 50 75 100 125 150 T CASE TEMPERATURE (C) C Prelim. 10/94 Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. CHANNEL DISSIPATION (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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