X-On Electronics has gained recognition as a prominent supplier of BFY90 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BFY90 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BFY90 STMicroelectronics

BFY90 electronic component of STMicroelectronics
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Part No.BFY90
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT . .
Datasheet: BFY90 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 3.2898 ea
Line Total: USD 16.45 
Availability - 0
MOQ: 5  Multiples: 200
Pack Size: 200
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 5
Multiples : 200
5 : USD 3.2898

   
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We are delighted to provide the BFY90 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFY90 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - BFY90 RF & MICROWAVE DISCRETE Features Silicon NPN, To - 72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) 500 MHz, 5v, 2.0 mA, 1.3 GHz Current - Gain Bandwidth Product 25mA IC 2 1. Emitter 2. Base 1 3 3. Collector 4 Power Gain, G = 19 dB (typ) 200 MHz 4. Case TO - 72 DESCRIPTION: Silicon NPN transistor , designed for VHF/UHF equipment. Applications include low noise amplifier oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Parameter Unit V Collector - Emitter Voltage c V Collector - V Emitter - 2.5 EBO I mA C Thermal Data P mWatts Total Device Dissipation T = 25 C A D 1.14 mW/ C C or contact our factory directADVANCEDPOWER.COM WWW Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Derate above 25 200 50 Collector Current Vdc Base Voltage CBO Vdc 30 Base Voltage CEO Vd 15 Value Symbol PE LOW POWER TRANSISTORS 9855 9840 1013 36 189 BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Unit Min. Max. Collector - (IC = 10 mAdc, IB = 0) - - ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) - - (on) DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) - - DYNAMIC Unit Min. Max. f - Gain - Bandwidth Product T (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) 1.3 - - NF min (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz - 2.5 5.0 Emitter - (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) - - 2.0 or contact our factory directADVANCEDPOWER.COM WWW Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein pF Base Capacitance Cibo dB GHz Current Typ. Test Conditions Symbol Value 125 20 HFE nA 10 Vdc 15 Emitter Breakdown Voltage BVCEO Typ. Test Conditions Symbol Value

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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