D2012UK TT Electronics

TetraFET D2012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED C MULTI-PURPOSE SILICON N (typ) 2 1 DMOS RF FET B A 10W 28V 1GHz 3 D (2 pls) SINGLE ENDED F (2 pls) H J FEATURES SIMPLIFIED AMPLIFIER DESIGN M E K I G SUITABLE FOR BROAD BAND APPLICATIONS DP LOWC rss PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE SIMPLE BIAS CIRCUITS LOW NOISE DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 HIGHGAIN10dBMINIMUM C 45 5 45 5 D 3.30 0.13 0.130 0.005 E 18.92 0.08 0.745 0.003 F 1.52 0.13 0.060 0.005 G 2.16 0.13 0.085 0.005 APPLICATIONS H 14.22 0.08 0.560 0.003 I 1.52 0.13 0.060 0.005 VHF/UHF COMMUNICATIONS J 6.35 0.13 0.250 0.005 from 50 MHz to 2 GHz K 0.13 0.03 0.005 0.001 M 5.08 0.51 0.200 0.020 N 1.27 x 45 0.13 0.050 x 45 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 42W D BV Drain Source Breakdown Voltage 65V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 4A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 12/00 E-mail: sales semelab.co.uk Website: D2012UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V =0 I = 10mA 65 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 28V V =0 0.8 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V =0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V =V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.8A 0.72 S fs DS D G Common Source Power Gain P = 10W 10 dB PS O Drain Efficiency V = 28V I = 0.4A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 C Input Capacitance V =0 V = 5V f = 1MHz 48 pF iss DS GS C Output Capacitance V = 28V V = 0 f = 1MHz 24 pF oss DS GS C Reverse Transfer Capacitance V = 28V V = 0f = 1MHz 2 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 4.2C / W THjcase Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 12/00 E-mail: sales semelab.co.uk Website: