NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D, OP516A, OP516B, OP516C, OP516D Features: OP515 OP516 Variety of sensitivity ranges Coaxial leaded package style Small package size for space limited applications Description: Each device in the OP515 and OP516 series consists of NPN silicon phototransistors in a small hermetic package with an extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is 100% production tested using infrared light for close correlation with Opteks GaAs and GaAIAs emitters. Absolute Maximum Ratings (T = 25C unless otherwise noted) A Continuous Collector Current 50 mA Collector-Emitter Voltage 30V Emitter -Collector Voltage (OP505 and OP506 series only) 5.0 V Storage & Operating Temperature Range -55C to +125C (1) Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron) 260C (2) Power Dissipation 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may be applied to the leads when soldering. (2) Derate linearly 0.71 mW/C above 25C. Emitter Lead (OP516 only) (OP516 only) General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 3/2018 Page 1 TT electronics plc NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D, OP516A, OP516B, OP516C, OP516D Symbol Parameter Min Typ Max Units Test Conditions 2(3) On-State OP515D/OP516D 0.40 mA V = 5 V, E = 5.0 mW/cm CE e I Collector OP515C/OP516C 1.00 C(ON) Current OP515B/OP516B 3.00 OP515A/OP516A 6.00 (4) I Collector-Dark Current 100 nA V = 10 V, E = 0 CEO CE e V Collector-Emitter Breakdown Voltage 30 V I = 100 A (BR)CEO C V Emitter -Collector Breakdown Voltage 5 V I = 100 A (BR)ECO E 2(3) V Collector-Emitter OP515/OP516 0.40 V I = 400 A, E = 5.0 mW/cm CE(SAT) C e Saturation Voltage 2 I / T Relative I Changes with Temperature 1.00 %/C V = 5 V, E = 1.0 mW/cm C c CE e OP505A-D and OP506A-D series I Emitter -Reverse Current 100 A V = 0.4V ECO EC Notes: (1) E is a measurement of the average apertured radiant energy incident upon a sensing area 0.250 (6.35mm) in diameter and e(APT) perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466 (11.84mm). E is not e(APT) necessarily uniform within the measured area. (2) Derating linearly 0.71 mW/C above 25C (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity lev el which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.040T -3.4) (4) To calculate typical collector dark current in nA, use the formula I = 10 where T is ambient temperature in C. CED A A Collector Current Vs Collector to Emitter Voltage vs Irradiance On-State Collector Current Vs Irradiance 3.5 3.5 T = 25C A T = 25C A = 940 nm V = 5 Volts CE 3.0 = 940 nm 3.0 6 mW/cm2 y = 0.6364x - 0.1221 5 mW/cm2 2 R = 0.9992 4 mW/cm2 2.5 2.5 3 mW/cm2 2 mW/cm2 1 mW/cm2 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 2 0.0 Ee -Irradiance -mW/cm 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE - Collector to Emitter Voltage (V) General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 3/2018 Page 2 TT electronics plc I -State Collector Current -mA C (ON) IC Collector Current (mA)