Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36 (91.4 cm) Low profile package 24 (61.0 cm) wire leads The OPB100Z series consists of an infrared LED (OPB100-EZ) and phototransistor (OPB100-SZ) in separate plastic housings. The low cost, snap-in design requires no screws or other mounting hardware for ease of installation. The emitter and sensor are not apertured, which allows separation distances in excess of 36 (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.059 (1.50 mm) thick material. This product is designed for general switching and low-speed data communications applications. Ordering Information Part LED Peak Lead Length / Non-contact reflective object Number Wavelength Sensor Spacing Non-contact interruptive sensing Assembly line automation OPB100-EZ 880 nm 24 / 26 AWG Machine automation Wire Machine safety OPB100-SZ Transistor Emiett r (LED) OPB100Z Contains both OPB100-EZ & OPB100-SZ Phototransistor Red White Hole Pattern Hole Pattern Black Green 0.190 4.83 26 AWG Symbolize Cover UL Rated Hole Pattern 0.335 8.51 0.150 3.81 Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage Temperature Range -40 C to +85 C (1) o o Operating Temperature Range -40 C to +80 C Input LED (OP298 for additional information) Forward DC Current 100 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A Reverse DC Voltage 2 V (2) Power Dissipation 142 mW Output Phototransistor (OP598 for additional information) Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Collector DC Current 50 mA (3) Power Dissipation 250 mW Electrical Characteriscti s (T = 25 C unless otherwise noted) A Input Diode (See OP298 for additional information for reference only) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 15 A V = 10 V R R q Emission Angle at Half Power Points - 25 - Degree I = 20 mA HP F I = 100 mA F mW/ E (APT) Apertured Radiant Intensity 6.5 - - Distance = 1.43 (3.63 cm) E 2 cm Aperture = 0.25 (6.35 mm) Output Phototransistor (See OP598 for additional information for reference only) 2 V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA, E = 0mw/cm (no light) (BR)CEO C E 2 V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A, E = 0mw/cm (no light) (BR)ECO C E 2 V = 10V, I = 0, E = 0 mw/cm CE F E I Collector Dark Current - - 100 nA CEO (no light) 2 V Collector-Emitter Saturation Voltage - - 0.4 V I = 400 A, E = 1.7 mw/cm CE(SAT) C E 2 I On-State Collector Current 5 - - mA V = 5 V, E = 1.7 mw/cm C(ON) CE E Notes: 1. Derate linearly 3.33 mW/C above 25C. 2. All parameters measured using pulse technique. 3. Derate linearly 1.43 mW/C above 25C.