X-On Electronics has gained recognition as a prominent supplier of SI2300DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2300DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2300DS-T1-GE3 VBsemi Elec

Name: SI2300DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2300DST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2300DS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2300DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 6A 28mO@4.5V,5A 2.1W N Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2300DS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0748 ea
Line Total: USD 0.75

Availability - 1491
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

SI2300DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1491

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0748
100 : USD 0.0609
300 : USD 0.0541
3000 : USD 0.0489
6000 : USD 0.0448
9000 : USD 0.0427

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT23 - 3 SOT23 - 3

Brand Category
Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss
20 V 20 V

Continuous Drain Current Id
6 A 6 A

Drain Source On Resistance Rdson@Vgs Id
28 mOhms @4.5V , 5A 28 mOhms @4.5V , 5A

Power Dissipation Pd
2.1 W 2.1 W

Gate Threshold Voltage Vgsth@Id
1 V @250uA 1 V @250uA

Reverse Transfer Capacitance Crss@Vds
55 pF @10V 55 pF @10V

Type
N Channel N Channel

Input Capacitance Ciss@Vds
865 pF @10V 865 pF @10V

Total Gate Charge Qg@Vgs
8.8 nC @4.5V 8.8 nC @4.5V

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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We are delighted to provide the SI2300DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2300DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2300DS-T1-GE3 is a 20V, 6A, 28mO@4.5V, N Channel SOT-23 MOSFET manufactured by VBsemi Elec. The device has a maximum power dissipation of 2.1W and is ROHS compliant. This MOSFET features a low RDS(on) of 28mO@4.5V making it ideal for switching applications where power efficiency matters. It is also suitable for high frequency circuit designs owing to its low capacitance. The device is also provided with a gate-source voltage rating of 20V and a continuous drain current rating of 6A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1491 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 10 Multiples : 10	10 : USD 0.0748 100 : USD 0.0609 300 : USD 0.0541 3000 : USD 0.0489 6000 : USD 0.0448 9000 : USD 0.0427

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Hot	SI2309CDS-T1-GE3 60V 5.2A 50mO@10V,3.2A 27W P Channel SOT-23-3 MOSFETs ROHS Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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