1N6478, 1N6479, 1N6480, 1N6481, 1N6482, 1N6483, 1N6484 www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Junction Rectifier FEATURES Superectifier structure for high reliability condition Superectier Ideal for automated placement Low forward voltage drop Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C MELF (DO-213AB) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in general purpose rectification of power supplies, I 1.0 A F(AV) inverters, converters and freewheeling diodes for consumer, 50 V, 100 V, 200 V, 400 V, 600 V, V RRM automotive and telecommunication. 800 V, 1000 V I 30 A FSM MECHANICAL DATA I 10 A R V 1.1 V Case: MELF (DO-213AB), molded epoxy over glass body F Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package MELF (DO-213AB) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test st Polarity: two bands indicate cathode end - 1 band nd denotes device type and 2 band denotes repetitive peak reverse voltage rating MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 UNIT STANDARD RECOVERY DEVICE: ST 1 BAND IS WHITE nd Polarity color bands (2 band) Gray Red Orange Yellow Green Blue Violet Max. repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Max. RMS voltage V 35 70 140 280 420 560 700 V RMS Max. DC blocking voltage V 50 100 200 400 600 800 1000 V DC Max. average forward rectified current I 1.0 A F(AV) Peak forward surge current 8.3 ms single half I 30 A FSM sine-wave superimposed on rated load Max. full load reverse current, full cycle average at I 100 A R(AV) T = 75 C A Operating junction and storage temperature T , T -65 to +175 C J STG range Revision: 18-May-2021 Document Number: 88527 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N6478, 1N6479, 1N6480, 1N6481, 1N6482, 1N6483, 1N6484 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 UNIT T = 25 C 1.1 Max. instantaneous A 1.0 A V V F forward voltage T = 75 C 1.0 A Max. DC reverse T = 25 C 10 A current at rated DC I A R T = 125 C 200 A blocking voltage Typical junction 4.0 V, 1 MHz C 8.0 pF J capacitance THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL1N64781N64791N64801N64811N64821N64831N6484UNIT (1) R 50 JA Max. thermal resistance C/W (2) R 20 JT Notes (1) Thermal resistance from junction to ambient, 0.24 x 0.24 (6.0 mm x 6.0 mm) copper pads to each terminal (2) Thermal resistance from junction to terminal, 0.24 x 0.24 (6.0 mm x 6.0 mm) copper pads to each terminal ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N6482-E3/96 0.114 96 1500 7 diameter plastic tape and reel 1N6482-E3/97 0.114 97 5000 13 diameter plastic tape and reel Revision: 18-May-2021 Document Number: 88527 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000