VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 20 A
FEATURES
125 C T operation (V < 5 V)
J R
Base
cathode
Single diode configuration
2
Optimized for OR-ing applications
Ultra low forward voltage drop
Guard ring for enhanced ruggedness and long
term reliability
1 3
TO-220AC
Cathode Anode
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified according to JEDEC-JESD47
Package TO-220AC
Halogen-free according to IEC 61249-2-21 definition
I 20 A
F(AV) (-N3 only)
V 15 V
R
DESCRIPTION
V at I See Electrical table
F F
The Schottky rectifier module has been optimized for
I max. 600 mA at 100 C
RM
ultra low forward voltage drop specifically for the
T max. 125 C
J
OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125
Diode variation Single die
C junction temperature. Typical applications are in parallel
E 10 mJ
AS
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 20 A
F(AV)
V 15 V
RRM
I t = 5 s sine 700 A
FSM p
V 19 A , T = 125 C (typical) 0.25 V
F pk J
T Range - 55 to 125 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-20L15TPbFVS-20L15T-N3UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
I 50 % duty cycle at T = 85 C, rectangular waveform 20
F(AV) C
See fig. 5
A
Maximum peak one cycle
5 s sine or 3 s rect. pulse 700
Following any rated load
non-repetitive surge current I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse V applied 330
RRM
See fig. 7
Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6 mH 10 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 2A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 26-Aug-11 Document Number: 94165
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A -0.41
T = 25 C
J
40 A - 0.52
Forward voltage drop
(1)
V V
FM
See fig. 1
19 A 0.25 0.33
T = 125 C
J
40 A 0.37 0.50
T = 25 C -10
Reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 100 C - 600
J
Threshold voltage V 0.182 V
F(TO)
T = T max.
J J
Forward slope resistance r 7.6 m
t
Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8 - nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction temperature range T - 55 to 125
J
C
Maximum storage temperature range T - 50 to 150
Stg
Maximum thermal resistance, DC operation
R 1.5
thJC
junction to case See fig. 4
Typical thermal resistance, Mounting surface, smooth and greased
R 0.50 C/W
thCS
case to heatsink (for TO-220)
Maximum thermal resistance,
DC operation
R 40
thJA
2
(for D PAK)
junction to ambient
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque Non-lubricated threads
(lbf in)
maximum 12 (10)
Marking device Case style TO-220AC 20L15T
Revision: 26-Aug-11 Document Number: 94165
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000