BAT54WS www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges DESIGN SUPPORT TOOLS click logo to get started AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial Models grade Available Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MECHANICAL DATA Material categorization: for definitions of compliance Case: SOD-323 please see www.vishay.com/doc 99912 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION BAT54WS-E3-08 or BAT54WS-E3-18 BAT54WS Single L4 Tape and reel BAT54WS-HE3-08 or BAT54WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current I 300 mA FRM (1) Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation P 150 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Maximum junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +125 C op Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage Tested with 100 A pulses V 30 V (BR) (1) Leakage current V = 25 V I 2A R R I = 0.1 mA V 240 mV F F I = 1 mA V 320 mV F F (1) Forward voltage I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D I = 10 mA, I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA, R = 100 R L Note (1) Pulse test t < 300 s, < 2 % p Rev. 2.0, 01-Jun-17 Document Number: 85667 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT54WS www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 T = 125 C j 100 - 40 C 10 1 25 C 0.1 0.01 000.2.4 0.6 0.8 1 1.2 1.4 18867 V - Forward Voltage (V) F Fig. 1 - Typical Forward Current vs. Forward Voltage vs. Various Temperatures 14 12 10 8 6 4 2 0 0 4 8 12 16 20 24 28 18868 V - Reverse Voltage (V) R Fig. 2 - Typical Capacitance vs. Reverse Applied Voltage 1000 T = 125 C j 100 100 C 75 C 10 50 C 1 25 C 0.1 0.01 02510 15 20530 V - Reverse Voltage (V) 18869 R Fig. 3 - Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures Rev. 2.0, 01-Jun-17 Document Number: 85667 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 C - Typical Capacitance (pF) I - Forward Current (mA) D I - Reverse Current (A) F R