TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET ESD Protected: 2000 V V (V) r ( ) V (V) I (A) (BR)DSS(min) DS(on) GS(th) D APPLICATIONS 6 V = 10 V 0.27 GS 6060 1 to 1 to 303.0 10 V = 4.5 V 0.21 Drivers: Relays, Solenoids, Lamps, Hammers, GS Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control TO-92-18RM TO-226AA (TO-18 Lead Form) D (TO-92) 1 1 S D Device Marking Device Marking 100 Front View Front View G G G 2 2 S TP S BS 0610KL 250KL xxyy xxyy D S 3 3 S = Siliconix Logo S = Siliconix Logo xxyy = Date Code xxyy = Date Code Top View Top View Ordering Information: TP0610KL-TR1 Ordering Information: BS250KL-TR1 S ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS VV Gate-Source Voltage V 20 GS T = 25 C 0.27 A Continuous Drain CurrentContinuous Drain Current II DD T = 70 C 0.22 A A a Pulse Drain Current I 1.0 DM T = 25 C 0.8 A PP Power DissipationPower Dissipation DD WW T = 70 C 0.51 A Maximum Junction-to-Ambient R 156 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 72712 www.vishay.com S-40244Rev. A, 16-Feb-04 1TP0610KL/BS250KL New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 60 (BR)DSS GS D VV Gate-Threshold Voltage V V = V , I = 250 A 1 2.1 3.0 GS(th) DS GS D V = 0 V, V = 20 V 10 A DS GS V = 0 V, V = 10 V 200 DS GS GateGate-Body LeakageBody Leakage II GSGSSS V = 0 V, V = 10 V, T = 85 C 500 nA DS GS J V = 0 V, V = 5 V 100 DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J V = 10 V, V = 4.5 V 50 DS GS aa OnOn-State Drain CurrentState Drain Current II mAmA D(D(on)) V = 10 V, V = 10 V 600 DS GS V = 4.5 V, I = 25 mA 5.5 10 GS D a V = 10 V, I = 500 mA 3.1 6 Drain-Source On-Resistance r DSDS((on)on) GS D V = 10 V, I = 500 mA, T = 125 C 4.7 9 GS D J a Forward Transconductance g V = 10 V, I = 100 mA 180 mS fs DS D a Diode Forward Voltage V I = 200 mA, V = 0 V 0.9 1.4 V SD S GS b Dynamic Total Gate Charge Q 1.7 3 g Gate-Source Charge Q 0.26 V = 30 V, V = 15 V, I 500 mA nC gs DSDS GSGS DD Gate-Drain Charge Q 0.46 gd Gate Resistance R 285 g t 2.4 5 d(on) TTurnurn-On TOn Tiimmee V = 25 V, R = 150 t DD L 15.5 25 r II 150 mA150 mA, V V = = 10 V10 V nsns DD GEGENN t 21 35 d(off) RR = 10 10 gg TTurnurn-OfOfff T Timeime t 12.5 20 f Notes a. Pulse test: PW 300 ms duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics Transfer Characteristics 1.0 1200 V = 10 V T = 55 C GS J 8 V 0.8 7 V 900 25 C 0.6 6 V 125 C 600 0.4 5 V 300 0.2 4 V 0.0 0 012345 02468 10 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72712 www.vishay.com S-40244Rev. A, 16-Feb-04 2 I Drain Current (A) D I Drain Current (mA) D