BYQ28E-100-E3/45 Vishay

33 3 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB Power pack Glass passivated pellet chip junction Ultrafast recovery times Soft recovery characteristics Low switching losses, high efficiency 3 3 2 2 High forward surge capability 1 1 Meets MSL level 1, per J-STD-020, LF maximum peak BYQ28E, UG10 BYQ28EF, UGF10 2 of 245 C for D PAK (TO-263AB package) PIN 1 PIN 1 PIN 2 PIN 2 CASE Solder dip 275 C max. 10 s, per JESD 22-B106 PIN 3 PIN 3 (for TO-220AB and ITO-220AB package) 2 D PAK (TO-263AB) AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 2 (for ITO-220AB and D PAK (TO-263AB package)) 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 BYQ28EB, UGB10 PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in low voltage, high frequency rectifier of switchin g power supplies, freewheeling diodes, DC/DC converters DESIGN SUPPORT TOOLS AVAILABLE and polarity protection application. MECHANICAL DATA 3D Models 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 2 x 5.0 A Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified F(AV) ( X denotes revision code e.g. A, B,....) V 100 V to 200 V RRM I 55 A Terminals: matte tin plated leads, solderable per FSM J-STD-002 and JESD 22-B102 t 25 ns rr E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix V 0.895 V F meets JESD 201 class 2 whisker test T max. 150 C J Polarity: as marked 2 Package TO-220AB, ITO-220AB, D PAK (TO-263AB) Mounting Torque: 10 in-lbs max. Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C UG10BCT UG10CCT UG10DCT PARAMETER SYMBOL UNIT BYQ28E-100 BYQ28E-150 BYQ28E-200 Maximum repetitive peak reverse voltage V 100 150 200 V RRM Working peak reverse voltage V 100 150 200 V RWM Maximum DC blocking voltage V 100 150 200 V DC total device 10 Maximum average forward rectified current at T = 100 C I A C F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 55 A FSM Non-repetitive peak reverse current per diode at t = 100 s I 0.2 A p RSM Electrostatic discharge capacitor voltage, V 8kV C human body model: C = 250 pF, R = 1.5 k Operating junction and storage temperature range T , T -40 to +150 C J STG Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 05-Jun-2019 Document Number: 88549 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT I = 10 A 1.25 F T = 25 C Maximum instantaneous forward voltage J (1) V 1.10 V F per diode I = 5 A F T = 150 C 0.895 J T = 25 C 10 Maximum reverse current per diode at J I A R working peak reverse voltage T = 100 C 200 J Maximum reverse recovery time per diode I = 1.0 A, dI/dt = 100 A/s, V = 30 V, I = 0.1 I t 25 ns F R rr RM rr Maximum reverse recovery time per diode I = 0.5 A, I = 1.0 A, I = 0.25 A t 20 ns F R rr rr Maximum stored charge per diode I = 2 A, dI/dt = 20 A/s, V = 30 V, I = 0.1 I Q 9nC F R rr RM rr Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C UG10 UGF10 UGB10 PARAMETER SYMBOL UNIT BYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient R 50 55 50 JA C/W Typical thermal resistance per diode, junction to case R 4.5 6.7 4.8 JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube 2 D PAK (TO-263AB) BYQ28EB-200-E3/45 1.77 45 50/tube Tube 2 D PAK (TO-263AB) BYQ28EB-200-E3/81 1.77 81 800/reel Tape and reel (1) ITO-220AB BYQ28EF-200HE3 A/P 1.95 P 50/tube Tube 2 (1) D PAK (TO-263AB) BYQ28EB-200HE3 A/P 1.95 P 50/tube Tube 2 (1) D PAK (TO-263AB) BYQ28EB-200HE3 A/I 1.95 I 800/reel Tape and reel Note (2) 2 AEC-Q101 qualified, available in ITO-220AB and D PAK (TO-263AB) package Revision: 05-Jun-2019 Document Number: 88549 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000