SB15H45
www.vishay.com
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
This datasheet reflects specifications of product in actual application.
FEATURES
Guardring for overvoltage protection
Low forward voltage drop, low power losses
High efficiency operation
High forward surge capability
Solder dip 275 C max. 10 s, per JESD 22-B106
P600 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
PRIMARY CHARACTERISTICS
protection, using DC forward current without reverse bias.
I 15 A
F(AV)
V 45 V MECHANICAL DATA
RRM
I 300 A
FSM Case: P600, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
V at I = 15 A 0.46 V
F F
Base P/N-E3 - RoHS compliant, commercial grade
T max. 175 C
OP
Terminals: Matte tin plated leads, solderable per
T max. (DC forward current) 200 C
J
J-STD-002 and JESD 22-B102
Package P600
E3 suffix meets JESD 201 class 1A whisker test
Diode variation Single die
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL SB15H45 UNIT
Maximum repetitive peak reverse voltage V 45 V
RRM
(1)
I 15
F(AV)
Maximum average forward rectified current (fig. 1) A
(2)
I 7
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 300 A
FSM
superimposed on rated load
Operating junction and storage temperature range T , T - 55 to + 175 C
OP STG
Junction temperature in DC forward current
(3)
T 200 C
J
without reverse bias, t 1 h (fig. 1)
Notes
(1)
With heatsink, T = 25 C
L
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 02-Aug-13 Document Number: 89061
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000T = 175 C
J
T = 200 C
J
SB15H45
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 5 A 0.48 -
F
I = 7.5 A T = 25 C 0.50 -
F A
I = 15 A 0.56 0.64
F
(1)
Instantaneous forward voltage V V
F
I = 5 A 0.35 -
F
I = 7.5 A T = 125 C 0.39 -
F A
I = 15 A 0.46 0.54
F
T = 25 C 10 300 A
A
(2)
Reverse current V = 45 V I
R R
T = 125 C 8 20 mA
A
Typical junction capacitance 4.0 V, 1 MHz C 1020 - pF
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: 10 ms pulse width
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL SB15H45 UNIT
(1)
R 66
JA
Thermal resistance C/W
(1)
R 14
JL
(2)
Typical thermal resistance R 3.5 C/W
JL
Notes
(1)
Without heatsink, free air
(2)
T = 75 C, T = 125 C, T = 175 C, infinite mass at 0.375" (9.5 mm) lead length
A L J
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SB15H45-E3/54 1.756 54 800 13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 C unless otherwise noted)
A
Notes
16
Mounted on junction box
With Heatsink, T = 25 C
L
Using DC forward current
14
Junction box SA (sink to ambient)
R = 16 C/W (see notes)
SA
Assumes R (lead to sink) of 5 C/W
LS
12
R = 18 C/W (see notes)
Thermal resistance R (sink to ambient):
SA SA
10
T - T
J A
8
R = ------------------------ - R + R
SA JL LS
P
D
6 Free Air
P : Power dissipation P = V x I
D D F F
4
2
0
0 25 50 75 100 125 150 175 200
Ambient Temperature (C)
Fig. 1 - Forward Current Derating Curve
Revision: 02-Aug-13 Document Number: 89061
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DC Forward Current (A)