P GND VIN G L CGND VDRV SiC521, SiC521A www.vishay.com Vishay Siliconix 30 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP4535-22L The SiC521 and SiC521A are integrated power stage package solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power Vishays Gen IV MOSFET technology and a density performance. Packaged in Vishays proprietary low-side MOSFET with integrated Schottky 4.5 mm x 3.5 mm MLP package, SiC521 and SiC521A diode enable voltage regulator designs to deliver up to 30 A Delivers up to 30 A continuous current, 40 A at 10 ms peak continuous current per phase. current The internal power MOSFETs utilize Vishays 95 % peak efficiency state-of-the-art Gen IV TrenchFET technology that delivers High frequency operation up to 1.5 MHz industry benchmark performance to significantly reduce Power MOSFETs optimized for 12 V input stage switching and conduction losses. 3.3 V (SiC521A) / 5 V (SiC521) PWM logic with tri-state and The SiC521 and SiC521A incorporate an advanced hold-off MOSFET gate driver IC that features high current driving Zero current detect control for light load efficiency capability, adaptive dead-time control, an integrated improvement bootstrap Schottky diode, and zero current detect to Low PWM propagation delay (< 20 ns) improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers, support Under voltage lockout for V CIN tri-state PWM, and 3.3 V (SiC521A) / 5 V (SiC521) PWM Material categorization: for definitions of compliance logic. please see www.vishay.com/doc 99912 APPLICATIONS Multi-phase VRDs for CPU, GPU, and memory Synchronous buck converters DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH VOUT Gate PWM driver PWM controller Fig. 1 - SiC521 and SiC521A Typical Application Diagram S15-0170-Rev. B, 09-Feb-15 Document Number: 62989 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiC521, SiC521A www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 11 10 9 8 7 6 25 V 12 5 PHASE SWH V IN 26 P V 13 GND 4 BOOT SWH V 14 3 C SWH GND 23 C V 15 GND 2 V SWH CIN 24 V 16 1 ZCD EN SWH GL 17 18 19 20 21 22 Fig. 2 - SiC521 and SiC521A Pin Configuration PIN DESCRIPTION PIN NUMBER NAME FUNCTION 1 ZCD EN ZCD control. Active low 2V Supply voltage for internal logic circuitry CIN 3, 23 C Analog ground for the driver IC GND 4 BOOT High-side driver bootstrap voltage 5 PHASE Return path of high-side gate driver 6 to 8, 25 V Power stage input voltage. Drain of high-side MOSFET IN 9 to 11, 17, 18, 20, 26 P Power ground GND 12 to 16 V Switch node of the power stage SWH 19, 24 GL Low-side gate signal 21 V Supply voltage for internal gate driver DRV 22 PWM PWM control input ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE SiC521CD-T1-GE3 SiC521 5 V PWM optimized PowerPAK MLP4535-22L SiC521ACD-T1-GE3 SiC521A 3.3 V PWM optimized SiC521ADB and SiC521DB Reference board S15-0170-Rev. B, 09-Feb-15 Document Number: 62989 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P P GND GND P P GND GND P GND GL V P IN GND V V IN DRV V PWM IN